Transient enhanced diffusion of B is strongly suppressed in C-rich Si. We show that the physical mechanism for this suppression is out-diffusion of C from regions of high C concentration. B doping superlattices with background C concentrations between and were grown by molecular beam epitaxy and implanted with ions. The measured dependence of transient B diffusion on the C profile is explained by coupled diffusion for C and Si point defects. The proposed model is supported by the observation of transient enhanced diffusion of C.
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