GaInAs/GaAs quantum-dot lasers were fabricated by self-organized growth in a molecular beam epitaxy system. By using a single active layer, lasers with low-threshold current densities for a 2 mm long device) and high internal quantum efficiencies (>90%) were obtained. Ground-state lasing of the quantum dots was observed up to a device temperature of 214 °C.
REFERENCES
1.
2.
3.
D.
Leonard
, M.
Krishnamurthy
, C. M.
Reaves
, S. P.
Denbaars
, and P. M.
Petroff
, Appl. Phys. Lett.
63
, 3203
(1993
).4.
F.
Heinrichsdorff
, M.-H.
Mao
, N.
Kirstaedter
, A.
Krost
, D.
Bimberg
, A. O.
Kosogov
, and P.
Werner
, Appl. Phys. Lett.
71
, 22
(1997
).5.
M. V.
Maximov
, Yu. M.
Shernyakov
, A. F.
Tsatsul’nikov
, A. V.
Lunev
, A. V.
Sakharov
, V. M.
Ustinov
, A. Yu.
Egorov
, A. E.
Zhukov
, A. R.
Kovsh
, P. S.
Kop’ev
, L. V.
Asryan
, Zh. I.
Alferov
, N. N.
Ledentsov
, D.
Bimberg
, A. O.
Kosogov
, and P.
Werner
, J. Appl. Phys.
83
, 5561
(1998
).6.
K.
Kamath
, P.
Bhattacharya
, T.
Sosnowski
, T.
Norris
, and J.
Phillips
, Electron. Lett.
32
, 1374
(1996
).7.
R.
Mirin
, A.
Gossard
, and J.
Bowers
, Electron. Lett.
32
, 1732
(1996
).8.
H.
Shoji
, Y.
Nakata
, K.
Mukai
, Y.
Sugiyama
, M.
Sugawara
, N.
Yokoyama
, and H.
Ishikawa
, Electron. Lett.
32
, 2023
(1996
).9.
D. L.
Huffaker
, G.
Park
, Z.
Zou
, O. B.
Shchekin
, and D. G.
Deppe
, Appl. Phys. Lett.
73
, 2564
(1998
).10.
V. M.
Ustinov
, A. Yu.
Egorov
, A. R.
Kovsh
, A. E.
Zhukov
, M. V.
Maximov
, A. F.
Tsatsul’nikov
, N. Yu.
Gordeev
, S. V.
Zaitsev
, Yu. M.
Shernyakov
, N. A.
Bert
, P. S.
Kop’ev
, Zh. I.
Alferov
, N. N.
Ledentsov
, J.
Böhrer
, D.
Bimberg
, A. O.
Kosogov
, P.
Werner
, and U.
Gösele
, J. Cryst. Growth
175/176
, 689
(1997
).11.
M. V.
Maximov
, I. V.
Kochnev
, Y. M.
Shernyakov
, S. V.
Zaitsev
, N. Yu.
Gordeev
, A. F.
Tsatsul’nikov
, A. V.
Sakharov
, I. L.
Krestnikov
, P. S.
Kop’ev
, Zh. I.
Alferov
, N. N.
Ledentsov
, D.
Bimberg
, A. O.
Kosogov
, P.
Werner
, and U.
Gösele
, Jpn. J. Appl. Phys., Part 1
36
, 4221
(1997
).12.
F.
Schäfer
, B.
Mayer
, J. P.
Reithmaier
, and A.
Forchel
, Appl. Phys. Lett.
73
, 2863
(1998
).13.
A.
Kuther
, M.
Bayer
, A.
Forchel
, A.
Gorbunov
, V. B.
Timofeev
, F.
Schäfer
, and J. P.
Reithmaier
, Phys. Rev. B
58
, R7508
(1998
).14.
R.
Leon
, Y.
Kim
, C.
Jagadish
, M.
Gal
, J.
You
, and D. J. H.
Cockayne
, Appl. Phys. Lett.
69
, 1888
(1996
).15.
N.
Chand
, E. E.
Becker
, J. P.
van der Ziel
, S. N. G.
Chu
, and N. K.
Dutta
, Appl. Phys. Lett.
58
, 1704
(1991
).16.
L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits (Wiley, New York 1995).
This content is only available via PDF.
© 1999 American Institute of Physics.
1999
American Institute of Physics
You do not currently have access to this content.
