superlattices were grown on (001) substrates by reactive molecular beam epitaxy (MBE). Sharp superlattice reflections were observed by x-ray diffraction. High-resolution transmission electron microscopy of a superlattice revealed that the interface structure is atomically sharp. The superlattice interfaces are fully coherent; no misfit dislocations or other crystal defects were observed in the superlattice by transmission electron microscopy. Selected area electron diffraction patterns indicated that the layers are oriented with the c axis parallel to the growth direction. The dimensional control and interface abruptness achieved in this model system indicate that MBE is a viable method for constructing oxide multilayers on a scale where enhanced dielectric effects are expected.
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10 May 1999
Research Article|
May 10 1999
Abrupt superlattices grown by reactive molecular beam epitaxy
J. C. Jiang;
J. C. Jiang
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109-2136
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X. Q. Pan;
X. Q. Pan
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109-2136
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W. Tian;
W. Tian
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109-2136
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C. D. Theis;
C. D. Theis
Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802-5005
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D. G. Schlom
D. G. Schlom
Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802-5005
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Appl. Phys. Lett. 74, 2851–2853 (1999)
Article history
Received:
June 18 1998
Accepted:
March 11 1999
Citation
J. C. Jiang, X. Q. Pan, W. Tian, C. D. Theis, D. G. Schlom; Abrupt superlattices grown by reactive molecular beam epitaxy. Appl. Phys. Lett. 10 May 1999; 74 (19): 2851–2853. https://doi.org/10.1063/1.124035
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