Delta doping with antimony isovalent impurity has been employed as a precursor for two-dimensional precipitation of excess arsenic in GaAs grown by molecular-beam epitaxy at low substrate temperature (LT-GaAs), and subsequently annealed. LT-GaAs films delta doped with indium isovalent impurity showed previously to provide two-dimensional As cluster sheets were studied for comparison. Small clusters observed by transmission electron microscopy at the Sb delta layers had an unusual lens shape and, probably, nonrhombohedral microstructure. These clusters induced strong local strains in the surrounding GaAs matrix. After annealing under the same conditions, the clusters at the Sb delta layers were found to be bigger than those at the In delta layers. Additionally, nucleation of the arsenic clusters at the Sb delta layers occurs at a relatively low annealing temperature. The observed precipitation features indicate that delta doping with Sb is more effective for two-dimensional precipitation of the excess As in LT-GaAs as compared with In delta doping.
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15 March 1999
Research Article|
March 15 1999
Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
N. A. Bert;
N. A. Bert
Ioffe Physical–Technical Institute, St. Petersburg 194021, Russia
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V. V. Chaldyshev;
V. V. Chaldyshev
Ioffe Physical–Technical Institute, St. Petersburg 194021, Russia
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A. A. Suvorova;
A. A. Suvorova
Ioffe Physical–Technical Institute, St. Petersburg 194021, Russia
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V. V. Preobrazhenskii;
V. V. Preobrazhenskii
Institute of Semiconductor Physics, Novosibirsk 630090, Russia
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M. A. Putyato;
M. A. Putyato
Institute of Semiconductor Physics, Novosibirsk 630090, Russia
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B. R. Semyagin;
B. R. Semyagin
Institute of Semiconductor Physics, Novosibirsk 630090, Russia
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P. Werner
P. Werner
Max-Plank Institut für Mikrostrukturphysik, Halle/Saale D-05120, Germany
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Appl. Phys. Lett. 74, 1588–1590 (1999)
Article history
Received:
October 27 1998
Accepted:
January 19 1999
Citation
N. A. Bert, V. V. Chaldyshev, A. A. Suvorova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, P. Werner; Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs. Appl. Phys. Lett. 15 March 1999; 74 (11): 1588–1590. https://doi.org/10.1063/1.123625
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