Crystal structure and magnetic properties in epitaxially grown on substrates were determined. Epitaxial exhibits a simple perovskite structure in the whole region of the Ba/Sr ratio, in contrast to the complex hexagonal layered perovskite of Ba-rich bulk which has plane-sharing oxygen octahedra. Tetragonal deformation was enhanced from pseudocubic in to a highly distorted tetragonal lattice in Electronic properties such as conductivity and magnetization were examined. A metal–insulator transition was not observed in this system, and metallic conductivity was maintained in the whole region of Ba concentration. Ferromagnetic ordering at 160 K seen in bulk was observed to be suppressed in the films with increasing tetragonal deformation and Curie temperatures decreased to 50 K in
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31 August 1998
Research Article|
August 31 1998
Lattice deformation and magnetic properties in epitaxial thin films of
Noburu Fukushima;
Noburu Fukushima
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
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Kenya Sano;
Kenya Sano
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
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Tatsuo Schimizu;
Tatsuo Schimizu
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
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Kazuhide Abe;
Kazuhide Abe
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
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Shuichi Komatsu
Shuichi Komatsu
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
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Appl. Phys. Lett. 73, 1200–1202 (1998)
Article history
Received:
July 21 1997
Accepted:
July 01 1998
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Comment on “Lattice deformation and magnetic properties in epitaxial thin films of ” [Appl. Phys. Lett. 73, 1200 (1998)]
Citation
Noburu Fukushima, Kenya Sano, Tatsuo Schimizu, Kazuhide Abe, Shuichi Komatsu; Lattice deformation and magnetic properties in epitaxial thin films of . Appl. Phys. Lett. 31 August 1998; 73 (9): 1200–1202. https://doi.org/10.1063/1.122126
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