The annealing kinetics of extended defects in -implanted Si have been investigated by in situ annealing plan-view transmission electron microscopy (TEM) samples in a TEM. A 〈100〉 Czochralski-grown silicon wafer was implanted with 100 keV at the subamorphizing dose of Following implantation, the effect of annealing of 800 °C was studied by in situ annealing. After 5 min of annealing at 800 °C, a dense collection of both {311} defects and small subthreshold dislocation loops were observed. Upon subsequent annealing, the {311} defect density decreased rapidly and the loop density increased. The evolution of approximately 500 {311} defects could be followed as a function of annealing time. The unfaulting of a {311} defect was observed to be the source of every subthreshold loop observed to from (about 150 loops in the monitored region). After the initial 5 min anneal at 800 °C, the probability of a {311} unfaulting into a loop was about 50%. Based on these observations, it is concluded that unfaulting of the {311} defects is the source of the subthreshold dislocation loops in nonamorphized ion-implanted silicon. 70% of the loops formed were determined to have a Burgers vector of while 30% were perfect with a Burgers vector of
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21 December 1998
Research Article|
December 21 1998
{311} defects in silicon: The source of the loops
Jinghong Li;
Jinghong Li
Department of Materials Science and Engineering, SWAMP Center, University of Florida, Gainesville, Florida 32611-6400
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Kevin S. Jones
Kevin S. Jones
Department of Materials Science and Engineering, SWAMP Center, University of Florida, Gainesville, Florida 32611-6400
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Appl. Phys. Lett. 73, 3748–3750 (1998)
Article history
Received:
August 28 1998
Accepted:
October 19 1998
Citation
Jinghong Li, Kevin S. Jones; {311} defects in silicon: The source of the loops. Appl. Phys. Lett. 21 December 1998; 73 (25): 3748–3750. https://doi.org/10.1063/1.122882
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