implant activation efficiencies above 90%, even at doses of have been achieved in GaN by rapid thermal processing at 1400–1500 °C for 10 s. The annealing system utilizes molybdenum intermetallic heating elements capable of operation up to 1900 °C, producing high heating and cooling rates (up to . Unencapsulated GaN shows severe surface pitting at 1300 °C and complete loss of the film by evaporation at 1400 °C. Dissociation of nitrogen from the surface is found to occur with an approximate activation energy of 3.8 eV for GaN (compared to 4.4 eV for AlN and 3.4 eV for InN). Encapsulation with either rf magnetron reactively sputtered or metal organic molecular beam epitaxy-grown AlN thin films provides protection against GaN surface degradation up to 1400 °C, where peak electron concentrations of can be achieved in Si-implanted GaN. Secondary ion mass spectrometry profiling showed little measurable redistribution of Si, suggesting at 1400 °C. The implant activation efficiency decreases at higher temperatures, which may result from to site switching and resultant self-compensation.
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13 July 1998
Research Article|
July 13 1998
Ultrahigh implant activation efficiency in GaN using a high-temperature rapid thermal process system
X. A. Cao;
X. A. Cao
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
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C. R. Abernathy;
C. R. Abernathy
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
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R. K. Singh;
R. K. Singh
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
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S. J. Pearton;
S. J. Pearton
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
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M. Fu;
M. Fu
Micropyretics Heaters International, Inc., Cincinnati, Ohio 45212
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V. Sarvepalli;
V. Sarvepalli
Micropyretics Heaters International, Inc., Cincinnati, Ohio 45212
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J. A. Sekhar;
J. A. Sekhar
Micropyretics Heaters International, Inc., Cincinnati, Ohio 45212
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J. C. Zolper;
J. C. Zolper
Office of Naval Research, Arlington, Virginia 22217
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D. J. Rieger;
D. J. Rieger
Sandia National Laboratories, Albuquerque, New Mexico 87185
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J. Han;
J. Han
Sandia National Laboratories, Albuquerque, New Mexico 87185
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T. J. Drummond;
T. J. Drummond
Sandia National Laboratories, Albuquerque, New Mexico 87185
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R. J. Shul;
R. J. Shul
Sandia National Laboratories, Albuquerque, New Mexico 87185
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R. G. Wilson
R. G. Wilson
Consultant, Stevenson Ranch, California 91381
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Appl. Phys. Lett. 73, 229–231 (1998)
Article history
Received:
March 31 1998
Accepted:
May 11 1998
Citation
X. A. Cao, C. R. Abernathy, R. K. Singh, S. J. Pearton, M. Fu, V. Sarvepalli, J. A. Sekhar, J. C. Zolper, D. J. Rieger, J. Han, T. J. Drummond, R. J. Shul, R. G. Wilson; Ultrahigh implant activation efficiency in GaN using a high-temperature rapid thermal process system. Appl. Phys. Lett. 13 July 1998; 73 (2): 229–231. https://doi.org/10.1063/1.121764
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