The energies of photo- and electroluminescence transitions in quantum wells exhibit a characteristic “blueshift” with increasing pumping power. This effect has been attributed either to band-tail filling, or to screening of piezoelectric fields. We have studied the pressure and temperature behavior of radiative recombination in quantum wells with 0.10, and 0.15. We find that, although the recombination has primarily a band-to-band character, the excitation-power induced blueshift can be attributed uniquely to piezoelectric screening. Calculations of the piezoelectric field in pseudomorphic layers agree very well with the observed Stokes redshift of the photoluminescence. The observed pressure coefficients of the photoluminescence (25–37 meV/GPa) are surprisingly low, and, so far, their magnitude can only be partially explained.
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9 November 1998
Research Article|
November 09 1998
InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy
Piotr Perlin;
Piotr Perlin
Lawrence Berkeley National Laboratory and University of California at Berkeley, Berkeley, California 94720
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Christian Kisielowski;
Christian Kisielowski
Lawrence Berkeley National Laboratory and University of California at Berkeley, Berkeley, California 94720
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Valentin Iota;
Valentin Iota
Physics Department, SUNY at Buffalo, Buffalo, New York 14260-1500
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B. A. Weinstein;
B. A. Weinstein
Physics Department, SUNY at Buffalo, Buffalo, New York 14260-1500
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Laila Mattos;
Laila Mattos
Lawrence Berkeley National Laboratory and University of California at Berkeley, Berkeley, California 94720
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Noad A. Shapiro;
Noad A. Shapiro
Lawrence Berkeley National Laboratory and University of California at Berkeley, Berkeley, California 94720
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Joachim Kruger;
Joachim Kruger
Lawrence Berkeley National Laboratory and University of California at Berkeley, Berkeley, California 94720
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Eicke R. Weber;
Eicke R. Weber
Lawrence Berkeley National Laboratory and University of California at Berkeley, Berkeley, California 94720
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Jinwei Yang
Jinwei Yang
APA Optics, Blaine, Minnesota 55449
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Appl. Phys. Lett. 73, 2778–2780 (1998)
Article history
Received:
May 14 1998
Accepted:
September 04 1998
Citation
Piotr Perlin, Christian Kisielowski, Valentin Iota, B. A. Weinstein, Laila Mattos, Noad A. Shapiro, Joachim Kruger, Eicke R. Weber, Jinwei Yang; InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy. Appl. Phys. Lett. 9 November 1998; 73 (19): 2778–2780. https://doi.org/10.1063/1.122588
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