Carbon diffusion in silicon has been investigated by using a superlattice structure of carbon spikes (10 nm-wide, carbon concentration >1019cm−3, spikes spaced 100 nm apart) grown epitaxially by Si molecular beam epitaxy. Samples were annealed in the range between 680 and 850 °C. The diffusive behavior of carbon was monitored by secondary ion mass spectrometry. Carbon diffusion profiles observed at temperatures above 800 °C show highly nonregular behavior. The diffusion results are interpreted in terms of the kick-out mechanism.

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