An analytical formula for the optical charging spectroscopy (OCS) discharging current in the case of homogeneous semiconductors is deduced. The computation shows that the OCS current is proportional with the square of the initially trapped carrier concentrations. This result leads to a higher sensitivity in case of the OCS method compared with the thermally stimulated current method. The OCS current formula obtained for one trapping level is generalized in the case of many trapping levels. From the generalized formula it can be seen that the OCS current can change the sign if both electron and hole traps exist in the sample.
Theoretical background of the optical charging spectroscopy method used for investigation of trapping levels
I. Pintilie, L. Pintilie, D. Petre, C. Tivarus, T. Botila; Theoretical background of the optical charging spectroscopy method used for investigation of trapping levels. Appl. Phys. Lett. 21 September 1998; 73 (12): 1685–1687. https://doi.org/10.1063/1.122245
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