Lasing and optical properties of ZnMgSSe/ZnSe-,ZnMgSSe/ZnSSe/ZnSe-, and ZnMgSSe/ZnMgSSe/ZnSe-based single- and multiple-quantum-well heterostructures grown by metalorganic vapor phase epitaxy were studied, and the characteristics were found to depend on the excitation intensity Iexc, temperature, and well width. Laser action under transverse optical pumping was achieved only for well widths Lz⩾4 nm and optical confinement factors Γ>0.04. In separate confinement heterostructures, lasing with the lowest threshold (Ithr=10–30 kW/cm2 at T=78 K) was achieved and device characteristics were studied up to T=577 K.

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