Magnetoresistance properties of compounds with the same formula ( 0.04) but synthesized by the solid-state reaction method from different starting materials are studied. Nearly stoichiometric compounds are obtained when is used for sample preparation. However, under the same condition, causes considerable oxygen deficiency in resulting samples, characterized by a broad metal–semiconductor transition far below the magnetic transition. Inhomogeneous distribution of the oxygen content in compounds (an inhomogeneity beyond the detection of powder x-ray diffraction) can occur when both and coexist in the starting materials, leading to two metal–semiconductor transitions which are obviously developments of those in compounds prepared respectively from and and one magnetic transition corresponding to the upper resistive transition.
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15 June 1998
Research Article|
June 15 1998
Effects of inhomogeneous oxygen content in perovskites Available to Purchase
J. R. Sun;
J. R. Sun
State Key Lab for Magnetism, Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China
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G. H. Rao;
G. H. Rao
State Key Lab for Magnetism, Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China
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Y. Z. Zhang
Y. Z. Zhang
State Key Lab for Superconductivity, Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China
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J. R. Sun
G. H. Rao
Y. Z. Zhang
State Key Lab for Magnetism, Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China
Appl. Phys. Lett. 72, 3208–3210 (1998)
Article history
Received:
December 15 1997
Accepted:
April 13 1998
Citation
J. R. Sun, G. H. Rao, Y. Z. Zhang; Effects of inhomogeneous oxygen content in perovskites. Appl. Phys. Lett. 15 June 1998; 72 (24): 3208–3210. https://doi.org/10.1063/1.121551
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