The current–voltage () characteristics for a metal-insulator-heavily-doped semiconductor structure are computed numerically by solving the time-dependent Schrödinger equation. The Fowler–Nordheim tunneling expression was found to be inappropriate to estimate the barrier potential nor found to fit the experimental results at both high and low applied fields. It is shown also that the computed characteristic curves agree well with the recently published experimental data for and films at the high as well as low fields.
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© 1998 American Institute of Physics.
1998
American Institute of Physics
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