We report on resonant electron tunneling in ZnSe/BeTe double-barrier, single-quantum-well heterostructures under high magnetic fields. Current–voltage characteristics have been investigated in the presence of a magnetic field B perpendicular to the tunneling current (B⊥I). The effect of the field on the main resonance position as well as two additional features due to optical phonon assisted tunneling into the quantum well has been studied and analyzed. The peak bias voltage exhibits a quadratic shift with increasing magnetic field due to a Lorentz force acting on the tunneling electrons. The phonon peaks do not shift, because the transverse momentum is no longer conserved during this process.

1.
A.
Waag
,
F.
Fischer
,
H. J.
Lugauer
,
Th.
Litz
,
J.
Laubender
,
U.
Lunz
,
U.
Zehnder
,
W.
Ossau
,
T.
Gerhardt
,
M.
Möller
, and
G.
Landwehr
,
J. Appl. Phys.
80
,
792
(
1996
).
2.
A.
Waag
,
F.
Fischer
,
K.
Schüll
,
T.
Baron
,
H.-J.
Lugauer
,
Th.
Litz
,
U.
Zehnder
,
W.
Ossau
,
T.
Gerhard
,
M.
Keim
,
G.
Reuscher
, and
G.
Landwehr
,
Appl. Phys. Lett.
70
,
280
(
1997
).
3.
U.
Lunz
,
M.
Keim
,
G.
Reuscher
,
F.
Fischer
,
K.
Schüll
,
A.
Waag
, and
G.
Landwehr
,
J. Appl. Phys.
80
,
6329
(
1996
).
4.
S. Ben
Amor
,
K. P.
Martin
,
J. J. L.
Rascol
,
R. J.
Higgins
,
A.
Torabi
,
H. M.
Harris
, and
C. J.
Summers
,
Appl. Phys. Lett.
53
,
2540
(
1988
).
5.
S. Ben
Amor
,
J. J. L.
Rascol
,
K. P.
Martin
,
R. J.
Higgins
,
R. C.
Potter
, and
H.
Hier
,
Phys. Rev. B
41
,
7860
(
1990
).
6.
L. Eaves, R. K. Hayden, D. K. Maude, M. L. Leadbeater, E. C. Valadares, M. Henini, O. H. Hughes, J. C. Portal, L. Cury, G. Hill, and M. A. Pate, High Magnetic Fields in Semiconductor Physics III, Springer Series in Solid State Sciences Vol. 101, edited by G. Landwehr (Springer, Berlin, 1992), p. 645.
7.
P.
Guéret
,
C.
Rossel
,
E.
Marclay
, and
H.
Meier
,
J. Appl. Phys.
66
,
278
(
1989
).
8.
D.
Walsh
,
K.
Mazuruk
, and
M.
Benzaquen
,
Phys. Rev. B
36
,
2883
(
1987
).
9.
C. Becker, U. Küster, R. Kruse, J. Geurts, H. Lugauer, F. Fischer, Th. Litz, A. Waag, and G. Landwehr, 23rd International Conference on the Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 249.
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