Electroluminescence (EL) and electrophysical characteristics of erbium and oxygen coimplanted and annealed junctions, characterized by higher values of the -related EL intensity at in the breakdown regime at 300 K as compared with that at 85 K, have been studied in the temperature range from 85 to 300 K. Hole traps in the Er–O codoped layer were found to be responsible for the anomalous EL behavior. Er-related EL was observed in the same samples in avalanche breakdown at high temperatures and in tunnel breakdown at low temperatures.
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© 1998 American Institute of Physics.
1998
American Institute of Physics
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