Selection of substrate orientation and phosphorus flux to achieve $p$-type carbon doping of $Ga0.5In0.5P$ by molecular beam epitaxy Available to Purchase

We show that the $p$-type doping of $Ga0.5In0.5P$ grown by solid-source molecular beam epitaxy using $CBr4$ as a carbon source is very strongly dependent upon the phosphorus flux and upon the substrate misorientation from (100). High densities of $A$-type steps and low phosphorus flux favor the incorporated carbon acting as a $p$-type dopant. We demonstrate that with the substrate orientation and phosphorus flux chosen to satisfy these two criteria, doping of $C:Ga0.5In0.5P$ into the mid-$1018 holes/cm3$ range can be achieved for the as-grown material.