A study of electrical conductance of hydrogenated amorphous silicon -Si:H) films deposited on optical waveguides in a soda-lime glass (SLG) substrate is carried out, from the viewpoint of electrical instability of -Si:H caused by the penetration of Na ions from the glass into the film. The optical waveguides were prepared by or ion exchange using thermal or field-assisted methods. The effective thickness of optical waveguides was of several micrometers. The obtained results show that in the case of -Si:H film deposited on silver waveguide there is a dependence of electrical conductance on measurement duration, if strongly weakened as compared with film deposited on the original SLG substrate. The -Si:H films deposited on potassium waveguide and on Na-extracted surface are as stable, as the referent samples with Corning 7059 (Na-free) glass substrate.
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28 July 1997
Research Article|
July 28 1997
Changes in electrical conductance of hydrogenated amorphous silicon deposited on optical waveguides in glass Available to Purchase
P. Danesh;
P. Danesh
Institute of Solid State Physics, Bulgarian Academy of Science, 1784 Sofia, Bulgaria
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B. Pantchev
B. Pantchev
Institute of Solid State Physics, Bulgarian Academy of Science, 1784 Sofia, Bulgaria
Search for other works by this author on:
P. Danesh
Institute of Solid State Physics, Bulgarian Academy of Science, 1784 Sofia, Bulgaria
B. Pantchev
Institute of Solid State Physics, Bulgarian Academy of Science, 1784 Sofia, Bulgaria
Appl. Phys. Lett. 71, 431–433 (1997)
Article history
Received:
February 17 1997
Accepted:
May 26 1997
Citation
P. Danesh, B. Pantchev; Changes in electrical conductance of hydrogenated amorphous silicon deposited on optical waveguides in glass. Appl. Phys. Lett. 28 July 1997; 71 (4): 431–433. https://doi.org/10.1063/1.119570
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