Highly luminescent ZnSe quantum dot arrays (QDAs) are spontaneously formed on cleavage-induced GaAs (110) surfaces. The QDAs are configured for their preferred growth on the step top. The confinement on carriers results from the difference in the band gaps of the strained ZnSe layer and the strain-relaxed ZnSe QDA. In contrast to other emissions from the ZnSe layer, the linewidth of the QDA emission is dependent neither on temperature nor on excitation intensity. Moreover, the energy position of the QDA emission is stable even at high excitations. These results reflect the δ functionlike density of states of the QDAs. This letter suggests a novel approach to semiconductor QDs and QDAs.

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The confinement effect in the [001] and the [1̄10] directions is very small because of both the small band offset and the large dimension. In the [110] direction, our calculation shows that the electron confinement energy will change less than 0.8 meV when the well width is varied from 1 to 6 nm in Zn0.993Cd0.007Se/ZnSe (110) quantum wells, where the total band discontinuity is roughly 8 meV (corresponding complete strain relaxation of the QDAs). The changes for hole confinement energy should be even smaller. The total band discontinuity and the subsequent changes in the electron/hole confinement energies should even be decreased in the case of partially strain-relaxed QDs.
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