$1/f$ dielectric polarization noise in silicon $p-n$ junctions

Dielectric polarization noise in silicon $p-n$ junctions was measured at low leakage current, less than $1×10−17 A,$ and at temperatures between 110 and 200 K. The power spectra of the noise voltages exhibit $1/f$ characteristics, where $f$ is the frequency. The dielectric loss of the $p-n$ junctions, which was derived from the $1/f$ noise by using the fluctuation-dissipation theorem, is proportional to the temperature, and is almost independent of the characteristics of the $p-n$ junctions.