Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in single crystals. Enhanced REBIC contrast, found in growth steps and other topographic features of the samples, is discussed in terms of charged oxygen-related defects. The capability of REBIC to image structural inhomogeneities caused by strain or plastic deformation in these crystals is also established. Charge carrier diffusion length has been estimated at different temperatures from REBIC linescan profiles.
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