A detailed study of the important role of temperature and gas ambient on the bonding between Si and InGaAs wafers was performed. The heterointerface was characterized by fabricating photodetectors and measuring the forward and reverse currents, the capacitance, the absolute quantum efficiency, and the response bandwidth. Clear evidence for a thin tunneling barrier is found for nonoptimum fusing conditions.
REFERENCES
1.
Y. H.
Lo
, R.
Bhat
, D. M.
Hwang
, C.
Chua
, and C.-H.
Lin
, Appl. Phys. Lett.
62
, 1038
(1993
).2.
K.
Mori
, K.
Tokutome
, K.
Nishi
, and S.
Sugou
, Electron. Lett.
30
, 1008
(1994
).3.
F. E.
Ejeckam
, C. L.
Chua
, Z. H.
Zhu
, Y. H.
Lo
, M.
Hong
, and R.
Bhat
, Appl. Phys. Lett.
67
, 3936
(1995
).4.
H.
Wada
and T.
Kamijoh
, IEEE Photonics Technol. Lett.
8
, 173
(1996
).5.
A. R.
Hawkins
, T. E.
Reynolds
, D. R.
England
, D. I.
Babic
, M. J.
Mondry
, K.
Dtreubel
, and J. E.
Bowers
, Appl. Phys. Lett.
68
, 3692
(1996
).6.
A. R.
Hawkins
, W.
Wu
, P.
Abraham
, K.
Streubel
, and J. E.
Bowers
, Appl. Phys. Lett.
70
, 303
(1997
).7.
B. F.
Levine
, A. R.
Hawkins
, S.
Hiu
, B. J.
Tseng
, C. A.
King
, L. A.
Gruezke
, R. W.
Johnson
, D. R.
Zolnowski
, and J. E.
Bowers
, Appl. Phys. Lett.
70
, 2449
(1997
).8.
C. A.
King
, R. W.
Johnson
, T. Y.
Chiu
, J. M.
Sung
, and M. D.
Morris
, J. Electrochem. Soc.
142
, 2430
(1995
).9.
We only plot the data for since at larger biases the contact in this earlier device design breaks down in the InGaAs, due to the contact metal being deposited directly on the low-band-gap material. The present device has a high-band-gap InP contact layer.
10.
S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
11.
S.
Bengtsson
, G. I.
Andersson
, M. O.
Andersson
, and O.
Engström
, J. Appl. Phys.
72
, 124
(1992
).12.
B.
Brar
, G. D.
Wilk
, and A. C.
Seabaugh
, Appl. Phys. Lett.
69
, 2728
(1996
).
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© 1997 American Institute of Physics.
1997
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