The excitation intensity dependent photoluminescence spectra of various modulation-doped InAs/GaAs quantum dots exhibit the band filling and band-gap renormalization. From the time-resolved photoluminescence spectra, in addition to the interaction of the carriers in quantum dots with the remote ionized impurities in a GaAs barrier, the screening due to the two-dimensional charges is found to mainly affect the carrier lifetime in the modulation-doped quantum dots.
Skip Nav Destination
Research Article| May 26 1997
Many-body effects on modulation-doped InAs/GaAs quantum dots
Joo In Lee;
Hyung Gyoo Lee;
Joo In Lee, Hyung Gyoo Lee, Eun-joo Shin, Sungkyu Yu, Dongho Kim, Gukhyung Ihm; Many-body effects on modulation-doped InAs/GaAs quantum dots. Appl. Phys. Lett. 26 May 1997; 70 (21): 2885–2887. https://doi.org/10.1063/1.119031
Download citation file: