The valence band discontinuity of the n-type cubic GaN/GaAs heterojunction is measured by means of angle-resolved photoemission spectroscopy using synchrotron radiation. High quality cubic GaN films are grown on GaAs(100) substrates by nitrogen plasma-assisted molecular beam epitaxy, and the valence band discontinuity is determined by a combination of core and valence level spectra. A value of ΔEV=(1.84±0.1) eV across the GaN/GaAs heterojunction is obtained, which means that the discontinuity in the conduction bands at this interface is very small, such that a vertical contact scheme may be realized for GaN/GaAs heterojunctions.

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