Photo-modulated electroreflectance and photoluminescence spectra of wurtzite GaN epilayers grown on a 6H-SiC or a Si (111) substrate were measured as a function of temperature. The valence band structure of a biaxially tensile-strained (−0.15% in axis) epilayer was drastically changed compared to that in unstrained and compressively strained ones; the optical transition between the conduction and the uppermost valence band exhibiting the minimum transition energy was polarized parallel to the axis, which is characteristic of the spin split-off valence band in unstrained crystal.
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