A GaAs‐InGaP switch has been fabricated and demonstrated. In this device, double i‐InGaP layers are employed to provide the potential barriers for carrier tunneling and hole confinement. As sufficient external voltage is applied to this device, a double S‐shaped negative‐differential‐ resistance (NDR) characteristics is obtained resulting from the sequential avalanche multiplications in the high electric field regions. However, because of the poor confinement effect to holes, only a single S‐shaped NDR phenomenon is observed at higher temperature. With device parameters appropriately adjusted, this device may show prominent potential for multiple‐valued logic applications.

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