We investigated diffusion barrier performance of chemical vapor deposition (CVD) TiN films prepared using tetrakis‐dimethyl‐amino titanium, Ti[N(CH3)2]4, to copper in the Cu/TiN/Si structure. The in situ treatment of the TiN films using N2/H2 plasma was found to significantly improve barrier performance against copper diffusion. The plasma‐treated TiN films were stable up to 650 °C but as‐deposited TiN films showed an evidence of copper diffusion into silicon even after annealing at 550 °C. The causes of the different effectiveness as a copper diffusion barrier of the two types of the CVD TiN films were discussed.

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© 1996 American Institute of Physics.
1996
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