An InAlAs/InGaAs/InP metal‐semiconductor‐metal photodetector with engineered Schottky barrier heights has been fabricated. A significant decrease in dark current with no change in the responsivity or the bandwidth was obtained by independently engineering the Schottky barrier heights at the anode and cathode. These photodiodes with an electrode width and spacing of 2 μm exhibited a dark current density of 20.0 fA/μm2 at an applied bias of 5 V. This dark current density is ∼6 times lower than the previously reported minimum.
REFERENCES
1.
J. B. D.
Soole
and H.
Schumacher
, IEEE J. Quantum Electron.
27
, 737
(1991
).2.
P.
Fay
, W.
Wohlmuth
, C.
Caneau
, and I.
Adesida
, Electron. Lett.
31
, 755
(1995
).3.
4.
S. M.
Sze
, D. J.
Coleman
, Jr., and A.
Loya
, Solid‐State Electron.
14
, 1209
(1971
).5.
W. C.
Koscielniak
, J.‐L.
Pelouard
, R. M.
Kolbas
, and M. A.
Littlejohn
, IEEE Trans. Electron Devices
37
, 1623
(1990
).6.
M. B.
Yi
, J.
Paslaski
, and L.‐T.
Lu
, J. Appl. Phys.
58
, 4730
(1985
).7.
K.
Ohnaka
, M.
Kubo
, and J.
Shibata
, IEEE Trans. Electron Devices
34
, 199
(1987
).8.
H. S.
Fresser
, F. E.
Prins
, and D. P.
Kern
, J. Vac. Sci. Technol. B
13
, 2553
(1995
).9.
W.
Wohlmuth
, P.
Fay
, C.
Caneau
, and I.
Adesida
, Electron. Lett.
32
, 249
(1996
).10.
K.
Vaccaro
, H. M.
Dauplaise
, A.
Davis
, S. M.
Spaziani
, and J. P.
Lorenzo
, Appl. Phys. Lett.
67
, 527
(1995
).
This content is only available via PDF.
© 1996 American Institute of Physics.
1996
American Institute of Physics
You do not currently have access to this content.
