Transient electron transport in an InP p‐i‐n nanostructure semiconductor has been studied by subpicosecond Raman spectroscopy at T=300 K. Both the nonequilibrium electron distribution and electron drift velocity in the regime of electron velocity overshoot have been directly measured. It is demonstrated that electron drift velocity in an InP p‐i‐n nanostructure is significantly larger than that in a GaAs p‐i‐n nanostructure sample, as a result of the larger central to satellite valley energy separation in InP.
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