The detector characteristics of a pseudomorphic p‐type Si0.64Ge0.36/Si quantum well infrared photodetector are reported. The device exhibits a photoresponse between 3 and 8 μm with a peak responsivity of Rp=76 mA/W, at a peak wavelength of λp=5 μm, resulting in a detectivity as high as Dλ*=2×1010 cm√Hz/W at a temperature of T=77 K. Background limited infrared performance is achieved up to T=85 K. Investigation of the polarization dependence shows that in‐plane polarized radiation produces the largest photoresponse, thus making normal‐incidence detection feasible. The relevant optical transitions are analyzed on the basis of a self‐consistent 6‐band Luttinger–Kohn calculation including the in‐plane dispersion.

1.
M. A.
Kinch
and
A.
Yariv
,
Appl. Phys. Lett.
55
,
2093
(
1989
).
2.
B.-Y.
Tsaur
,
C. K.
Chen
, and
S. A.
Marino
,
IEEE Electron Device Lett.
12
,
293
(
1991
).
3.
J. S.
Park
,
T. L.
Lin
,
E. W.
Jones
,
H. M.
Del Castillo
, and
S. D.
Gunapala
,
Appl. Phys. Lett.
64
,
2370
(
1994
).
4.
B. F.
Levine
,
J. Appl. Phys.
74
,
R1
(
1993
).
5.
S. D. Gunapala and K. M. S. Bandara, in Homojunction and Quantum-Well Infrared Detectors, edited by M. H. Francombe and J. L. Vossen (Academic, San Diego, 1995).
6.
K. W. Goossen and S. A. Lyon, J. Appl. Phys. 63, 5149 (1988); J. Y. Andersson and L. Lundqvist, Appl. Phys. Lett. 59, 857 (1991).
7.
B. F.
Levine
,
S. D.
Gunapala
,
J. M.
Kuo
,
S. S.
Pei
, and
S.
Hui
,
Appl. Phys. Lett.
59
,
1864
(
1991
).
8.
J. S. Park, R. P. G. Karunasiri, and K. L. Wang, Appl. Phys. Lett. 61, 681 (1992); R. P. G. Karunasiri, J. S. Park, and K. L. Wang, ibid.61, 2434 (1992); K. L. Wang and R. P. G. Karunasiri, in Semiconductor Quantum Wells and Superlattices for Long-Wavelength Infrared Detectors, edited by M. O. Manasreh (Artech House, Boston, 1993).
9.
T.
Fromherz
,
P.
Kruck
,
M.
Helm
,
G.
Bauer
,
J. F.
Nützel
, and
G.
Abstreiter
,
Appl. Phys. Lett.
68
,
3611
(
1996
).
10.
S.
Zanier
,
J. M.
Berroir
,
Y.
Guldner
,
J. P.
Vieren
,
I.
Sagnes
,
F.
Glowacki
,
Y.
Campidelli
, and
P. A.
Badoz
,
Phys. Rev. B
51
,
14311
(
1995
).
11.
D. J.
Robbins
,
M. B.
Stanaway
,
W. Y.
Leong
,
R. T.
Carline
, and
N. T.
Gordon
,
Appl. Phys. Lett.
66
,
1512
(
1995
).
12.
R. People, J. C. Bean, C. G. Bethea, and L. J. Peticolas, Appl. Phys. Lett. 61, 1122 (1992).
13.
R.
People
,
J. C.
Bean
,
S. K.
Sputz
,
C. G.
Bethea
, and
L. J.
Peticolas
,
Thin Solid Films
222
,
120
Y. C.
Chang
and
R. B.
James
,
Phys. Rev. B
B39
,
12
672
(
1989
).
14.
R.
People
and
S. K.
Sputz
,
Phys. Rev. B
41
,
8431
(
1990
).
15.
T.
Fromherz
,
E.
Koppensteiner
,
M.
Helm
,
G.
Bauer
,
J. F.
Nützel
, and
G.
Abstreiter
,
Phys. Rev. B
50
,
15073
(
1994
).
16.
Note that absorption measurements of QWIP structures are often not conclusive due to the strong free-carrier absorption from the heavily doped contact layers. Instead, absorption measurements of similar structures without contact layers have been investigated in Ref. 9.
17.
A.
Fenigstein
,
E.
Finkman
,
G.
Bahir
, and
S. E.
Schacham
,
J. Appl. Phys.
76
,
1998
(
1994
).
18.
H. C.
Liu
,
Appl. Phys. Lett.
60
,
1507
(
1992
).
This content is only available via PDF.
You do not currently have access to this content.