The InAs/GaSb(001) valence‐band offset is calculated for the two inequivalent GaAs‐like and InSb‐like interfaces and found to coincide to within ≊30 meV. This result is rationalized and generalized to arbitrary composition profiles and induced strain by using a simple model, based on the linear response theory, which is validated by a number of accurate first‐principles calculations for intermixed interfaces.

Topics
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1996
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