Thin films of colossal magnetoresistance (MR) material, La0.67Ca0.33MnO3, were implanted with different doses (1011–1015 ions/cm2) of 200 keV Ar+ ions. The implanted samples were examined by ion channeling and x‐ray diffraction techniques. The channeling results clearly showed that the magnitude of the induced lattice disorder did not increase greatly for implantation doses up to 5×1013 ions/cm2. In this low dose implantation regime, the magnetoresistance {MR=[R(0)−R(H)]/R(0)} increased by 50%, the peak resistivity went up by two orders of magnitude, and the magnetoresistivity peak temperature decreased by 130 K compared to the original, unimplanted sample. For doses ≥5×1013 ions/cm2, the damage was significant and caused the sample to become semiconducting.
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11 November 1996
Research Article|
November 11 1996
Ion implantation induced enhancement of magnetoresistance in La0.67Ca0.33MnO3
C.‐H. Chen;
C.‐H. Chen
Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742
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V. Talyansky;
V. Talyansky
Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742
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C. Kwon;
C. Kwon
Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742
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M. Rajeswari;
M. Rajeswari
Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742
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R. P. Sharma;
R. P. Sharma
Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742
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R. Ramesh;
R. Ramesh
Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742
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T. Venkatesan;
T. Venkatesan
Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742
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John Melngailis;
John Melngailis
Department of Electrical Engineering, University of Maryland, College Park, Maryland 20742
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Z. Zhang;
Z. Zhang
Texas Center for Superconductivity, University of Houston, Houston, Texas 77204
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W. K. Chu
W. K. Chu
Texas Center for Superconductivity, University of Houston, Houston, Texas 77204
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Appl. Phys. Lett. 69, 3089–3091 (1996)
Article history
Received:
May 15 1996
Accepted:
September 13 1996
Citation
C.‐H. Chen, V. Talyansky, C. Kwon, M. Rajeswari, R. P. Sharma, R. Ramesh, T. Venkatesan, John Melngailis, Z. Zhang, W. K. Chu; Ion implantation induced enhancement of magnetoresistance in La0.67Ca0.33MnO3. Appl. Phys. Lett. 11 November 1996; 69 (20): 3089–3091. https://doi.org/10.1063/1.117314
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