A focused laser beam has been used to induce oxidation of hydrogen‐passivated silicon. The scanning laser beam removes the hydrogen passivation locally from the silicon surface, which immediately oxidizes in air. The process has been studied as a function of power density and excitation wavelength on amorphous and crystalline silicon surfaces in order to determine the depassivation mechanism. The minimum linewidth achieved is about 450 nm using writing speeds of up to 100 mm/s. The process is fully compatible with local oxidation of silicon by scanning probe lithography. Wafer‐scale patterns can be generated by laser direct oxidation and complemented with nanometer resolution by scanning probe techniques. The combined micro‐ and nanoscale pattern can be transferred to the silicon in a single etching step by either wet or dry etching techniques.
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11 November 1996
Research Article|
November 11 1996
Laser direct writing of oxide structures on hydrogen‐passivated silicon surfaces
M. Müllenborn;
M. Müllenborn
Microelectronics Center, Technical University of Denmark, Lyngby, Denmark
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K. Birkelund;
K. Birkelund
Microelectronics Center, Technical University of Denmark, Lyngby, Denmark
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F. Grey;
F. Grey
Microelectronics Center, Technical University of Denmark, Lyngby, Denmark
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S. Madsen
S. Madsen
DME‐Danish Micro Engineering A/S, Herlev, Denmark
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Appl. Phys. Lett. 69, 3013–3015 (1996)
Article history
Received:
June 07 1996
Accepted:
September 11 1996
Citation
M. Müllenborn, K. Birkelund, F. Grey, S. Madsen; Laser direct writing of oxide structures on hydrogen‐passivated silicon surfaces. Appl. Phys. Lett. 11 November 1996; 69 (20): 3013–3015. https://doi.org/10.1063/1.116823
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