Positron beam lifetime spectroscopy has been utilized to study the depth distribution of vacancy‐type defects in molecular beam epitaxy GaAs grown at low temperature. Lifetime spectra were measured as a function of positron energy. From the analysis of the positron lifetime in as‐grown and annealed low temperature grown GaAs, the concentrations of Ga monovacancies and voids are estimated. Our results show that in an as‐grown sample the Ga monovacancy concentration is >3×1018 cm−3. It is also known that vacancy‐cluster concentration in an annealed sample exceeds 1018 cm−3 with a nonuniform spatial distribution.
Vacancy‐type defects in molecular beam epitaxy low temperature grown GaAs, a positron beam lifetime study
J. Störmer, W. Triftshäuser, N. Hozhabri, K. Alavi; Vacancy‐type defects in molecular beam epitaxy low temperature grown GaAs, a positron beam lifetime study. Appl. Phys. Lett. 23 September 1996; 69 (13): 1867–1869. https://doi.org/10.1063/1.117460
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