PbS/PbTiO3/Si heterostructures were prepared by successive depositions of a PbTiO3 thin film using the sol‐gel method and of a PbS thin film using the coprecipitation method on a bulk silicon wafer. The current–voltage characteristic of the heterostructure is of a diode type. The heterostructure is sensitive over a broad range of wavelengths, from 0.35 to 3 μm, when illuminated with continuous light or with modulated light. Three sensitivity peaks are observed, at 2.7, 0.95, and 0.38 μm. The measured signals are attributed to a photovoltaic effect which appears in the studied heterostructure.

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