InGaN multi‐quantum well (MQW) structure laser diodes (LDs) with various different cavity lengths were fabricated on sapphire substrates with (112̄0) orientation (A face). The external differential quantum efficiency was obtained as a function of the cavity length. An internal quantum efficiency of 86%, an intrinsic loss of 54 cm−1 and a threshold gain of 110 cm−1 were obtained. Measuring the pulse response of the LDs, a carrier lifetime of 2.5 ns was obtained. A threshold carrier density was calculated as 1.3×1019/cm3. The emission wavelength of the LDs was around 406 nm.

Topics
Electronic transport, Semiconductor device fabrication, Optical resonators, Quantum wells, Quantum efficiency, Lasers
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