Photoassisted etching of GaN in HCl by a 193 nm ArF excimer laser is reported. A directed stream of HCl etchant with background pressure of ∼5×10−4 Torr, sample temperature between 200 and 400 °C and 1400 mJ/cm2 laser fluence combined to produce etching. Smooth etch features and distinct sidewalls were observed. For the HCl/GaN system, photoassisted etching occurred only when both HCl and laser energy were present.

Topics
Etching, Lasers, Semiconductors
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