Photoassisted etching of GaN in HCl by a 193 nm ArF excimer laser is reported. A directed stream of HCl etchant with background pressure of ∼5×10−4 Torr, sample temperature between 200 and 400 °C and 1400 mJ/cm2 laser fluence combined to produce etching. Smooth etch features and distinct sidewalls were observed. For the HCl/GaN system, photoassisted etching occurred only when both HCl and laser energy were present.
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Research Article| February 05 1996
Photoassisted dry etching of GaN
R. T. Leonard;
R. T. Leonard, S. M. Bedair; Photoassisted dry etching of GaN. Appl. Phys. Lett. 5 February 1996; 68 (6): 794–796. https://doi.org/10.1063/1.116535
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