We have deposited a silicon oxide (SiOx) film with a high optical transmittance in the DUV region by a focused ion beam induced deposition technique using a gallium ion beam and a mixture of oxygen and TMCTS(1,3,5,7‐tetramethylcyclotetrasiloxane) as a source gas. The optical transmittance of a 0.3 μm thick film is higher than 90% at the wavelength of 250 nm. The transmittance of the deposited SiOx film depends on both the source gas and ion beam irradiation conditions. A scaling to explain the transmittance along with the ion beam conditions is proposed.

Topics
Focused ion beam, Dielectric materials, Thin films, Oxides, Chemical elements
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© 1996 American Institute of Physics.
1996
American Institute of Physics
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