A monitor for Al vapor density based on atomic absorption (AA) using a frequency‐doubled external‐cavity‐diode‐laser source at 394 nm has been demonstrated in both evaporation and sputtering processes. Closed loop operation was achieved for electron‐beam evaporated aluminum in a vacuum chamber using the AA signal for feedback. A series of runs in a dc sputtering chamber at the deposition rate of 900 Å/min illustrates the system reproducibility and the possibility of controlling the sputtering process and measuring the spatial distribution of the sputtered atoms with the AA monitor. Coherent light in the blue‐UV region (380–430 nm) using quasi‐phase‐matched lithium niobate waveguides was demonstrated with efficiencies of 25–150%/W, a range of wavelengths that covers many technologically important elements in physical vapor deposition processes.
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5 February 1996
Research Article|
February 05 1996
Atomic absorption monitor for deposition process control of aluminum at 394 nm using frequency‐doubled diode laser Available to Purchase
Weizhi Wang;
Weizhi Wang
Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305
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M. M. Fejer;
M. M. Fejer
Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305
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R. H. Hammond;
R. H. Hammond
Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305
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M. R. Beasley;
M. R. Beasley
Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305
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C. H. Ahn;
C. H. Ahn
Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305
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M. L. Bortz;
M. L. Bortz
Focused Research, Inc., 2630 Walsh Avenue, Santa Clara, California 95051
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T. Day
T. Day
Focused Research, Inc., 2630 Walsh Avenue, Santa Clara, California 95051
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Weizhi Wang
M. M. Fejer
R. H. Hammond
M. R. Beasley
C. H. Ahn
M. L. Bortz
T. Day
Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305
Appl. Phys. Lett. 68, 729–731 (1996)
Article history
Received:
November 07 1995
Accepted:
November 28 1995
Citation
Weizhi Wang, M. M. Fejer, R. H. Hammond, M. R. Beasley, C. H. Ahn, M. L. Bortz, T. Day; Atomic absorption monitor for deposition process control of aluminum at 394 nm using frequency‐doubled diode laser. Appl. Phys. Lett. 5 February 1996; 68 (6): 729–731. https://doi.org/10.1063/1.116785
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