Gain for less than one picosecond is observed in a type II GaAs/AlAs multiple quantum well and compared to a type I multiple quantum well under the same conditions. A sophisticated three‐beam experiment is used to unambiguously determine the internal gain of the samples. This method is capable of measuring very small amounts of gain and applicable to a wide variety of situations. The observations are well explained by a simple carrier scattering model.

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© 1996 American Institute of Physics.
1996
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