InxAl1−xAs/InyAl1−yAs vertical superlattices (VS) were naturally formed by phase separation during the growth of InAlAs/InP layers at temperatures in the range 565–615 °C by metalorganic chemical vapor deposition. The VS lies perpendicular to the (001) growth plane. As the growth temperature increased from 565 to 615 °C, the VS decreased in thickness from ∼15 to ∼6 nm, and became less planar and uniform. Transmission electron diffraction results showed the occurrence of CuPt‐type ordering in some of the layers. Band‐gap reduction of ∼300 meV was observed in the InAlAs layers grown at temperatures ranging from 565 to 615 °C. Such a large reduction in band‐gap energy was attributed to combined effects of the VS and CuPt‐type ordering.

Topics
Semiconductors, Superlattices, Thermodynamic states and processes, Electron diffraction, Chemical vapor deposition
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1996
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