Based on an inverse transform method originally developed by Chandley and modified by us in the present work, we show that the height‐height correlation function of a rough Si surface can be obtained directly from a single intensity distribution profile of light scattering. A novel diode array detectors arrangement was used to obtain the intensity profile. The roughness parameters, including the interface width, lateral correlation length, and roughness exponent were extracted from the height‐height correlation function and were compared with that obtained by an atomic force microscope.

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