High continuous wave (cw) optical output power of 10 mW has been achieved from an InAsSb diode laser at 82 K in the 3.6 μm spectral region. The threshold current has been as low as 37 mA at 82 K with a characteristic temperature of 23 K. It could be shown that in multimode operation of the InAsSb‐laser the cw optical output power for a single lasing mode is limited to about 2 mW.

1.
P.
Werle,
Appl. Phys. B
60
,
499
(
1995
).
2.
Z.
Feit,
D.
Kostyk,
R. J.
Woods
, and
P.
Mak,
Appl. Phys. Lett.
57
,
2881
(
1990
).
3.
A. N.
Baranov,
A. N.
Imenkov,
V. V.
Sherstnev
, and
Yu. P.
Yakovlev,
Appl. Phys. Lett.
64
,
2480
(
1994
).
4.
H. Q.
Le,
G. W.
Turner,
J. R.
Ochoa
, and
A.
Sanchez,
Electron. Lett.
30
,
1944
(
1994
).
5.
A. Popov, B. Scheumann, R. Mücke, A. Baranov, V. Sherstnev, Y. Yakovlev, and P. Werle, Infrared Phys. Technol. (in press).
6.
G. P. Agrawal and N. K. Dutta, Long-Wavelength Semiconductor Lasers (Van Nostrand, New York, 1986).
This content is only available via PDF.
You do not currently have access to this content.