We report the application of in situ laser reflectometry in measuring index of refraction and other optical properties of InxAl1−xAs (0≤x≤1) epitaxial layers grown on GaAs substrates by low‐pressure metal‐organic chemical vapor deposition method. Two different lasers were used: One was a He–Ne laser operating at 0.6328 μm and the other was a single mode distributed‐feedback (DFB) laser diode operating at 1.530 μm. The two laser beams were simultaneously directed on the growing layer at an angle of 71° from the surface normal. The oscillatory signals showed a variety of patterns depending on the index of refraction of the epitaxial layer of InxAl1−xAs (0≤x≤1). The initial oscillatory signal pattern was found to be reversed at the composition of x=0.75, where the index of refraction of the InxAl1−xAs layer is the same as that of the GaAs substrate. The absorption coefficients and indices of refraction of the InxAl1−xAs epitaxial layers were obtained for the entire range of composition at the growth temperature of 535 °C by in situ laser reflectometry.

Topics
Laser reflectometry, Epitaxy, Optical properties, Chemical vapor deposition, Optical absorption, Semiconductor lasers
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