Thin nanocrystalline silicon (nc‐Si) films deposited by plasma enhanced chemical vapor deposition (PECVD) exhibited room‐temperature photoluminescence in the visible range of the electromagnetic spectrum. High resolution transmission electron microscopy revealed that the films are made of Si crystals with dimensions 2–15 nm. The photoluminescence spectra of the nc‐Si films were similar to the spectra observed from porous silicon produced by anodization and electrochemical dissolution of crystalline Si. This similarity suggests that the luminescence mechanism of nc‐Si films is similar to the mechanism of light emission from porous silicon. The ability to manufacture luminescent Si films by methods which are compatible with the current Si based technology, such as PECVD, can provide new possibilities in the realization of optoelectronic devices.

Topics
Electromagnetic spectrum, Room-temperature photoluminescence, Photoluminescence spectroscopy, Thin films, Transmission electron microscopy, Chemical vapor deposition, Nanomaterials, Optoelectronic devices, Chemical elements
1.
L. T.
Canham,
Appl. Phys. Lett.
57
,
1046
(
1990
).
Google Scholar
 
2.
D. J.
Lockwood,
Solid State Commun.
92
,
101
(
1994
).
Google Scholar
 
3.
N.
Sato,
K.
Sakaguchi,
K.
Yamagata,
Y.
Fujiyama
, and
T.
Yonehara,
J. Electrochem. Soc.
142
,
3116
(
1995
).
Google Scholar
 
4.
C. S.
Chang
and
J. T.
Lue,
Thin Solid Films
259
,
275
(
1995
).
Google Scholar
 
5.
X.
Zhao,
O.
Schoenfeld,
Y.
Aoyagi
, and
T.
Sugano,
Appl. Phys. Lett.
65
,
1290
(
1994
).
Google Scholar
 
6.
Y. M.
Weng,
Zh. N.
Fan
, and
X. F.
Zong,
Appl. Phys. Lett.
63
,
168
(
1993
).
Google Scholar
 
7.
S. D.
Russell,
W. B.
Dubbelday,
P.
Georgief,
R. L.
Shimabukuro
, and
P. R.
de la Houssaye,
J. Appl. Phys.
76
,
6012
(
1994
).
Google Scholar
 
8.
T.
Takagahara
and
K.
Takeda,
Phys. Rev. B
46
,
15578
(
1992
).
Google Scholar
 
9.
M.
Stutzmann,
M. S.
Brandt,
E.
Bustarret,
H. D.
Fuchs,
M.
Rosenbauer,
A.
Hopner
, and
J.
Weber,
J. Non-Cryst. Solids
164–166
,
931
(
1993
).
Google Scholar
 
10.
P.
Deak,
M.
Rosenbauer,
M.
Stutzmann,
J.
Weber
, and
M. S.
Brandt,
Phys. Rev. Lett.
69
,
2531
(
1992
).
Google Scholar
 
11.
S, M.
Prokes,
O. J.
Glembocki,
V. M.
Bermudez,
R.
Kaplan,
L. E.
Friedersdorf
, and
P. C.
Searson,
Phys. Rev. B
45
,
13788
(
1992
).
Google Scholar
 
12.
S.
Furukawa
and
T.
Miyasato,
Jpn. J. Appl. Phys.
27
,
L2207
(
1988
).
Google Scholar
 
13.
H.
Takagi,
H.
Ogawa,
Y.
Yamazaki,
A.
Ishizaki
, and
T.
Nakagiri,
Appl. Phys. Lett.
56
,
2379
(
1990
).
Google Scholar
 
14.
I.
Solomon,
B.
Drevillon,
H.
Shirai
, and
N.
Layadi,
J. Non-Cryst. Solids
164–166
,
989
(
1993
).
Google Scholar
 
15.
J. J.
Boland
and
G. N.
Parsons,
Science
256
,
1304
(
1992
).
Google Scholar
 
16.
M.
Otobe
and
S.
Oda,
J. Non-Cryst. Solids
164–166
,
993
(
1993
).
Google Scholar
 
17.
H. V.
Nguyen,
I.
An,
R. W.
Collins,
Y.
Lu,
M.
Wakagi
, and
C. R.
Wronski,
Appl. Phys. Lett.
65
,
3335
(
1994
).
Google Scholar
 
18.
S. C.
Deshmukh
and
E. S.
Aydil,
J. Vac. Sci. Technol. A
13
,
2355
(
1995
).
Google Scholar
 
19.
S. M. Han and E. S. Aydil, J. Vac. Sci. Technol. (to be published).
20.
R.
Tsu,
H.
Shen
, and
M.
Dutta,
Appl. Phys. Lett.
60
,
112
(
1992
).
Google Scholar
 
21.
J.
Zeman,
M.
Zigone,
G. L. J. A.
Rikken
, and
G.
Martinez,
Solid State Commun.
96
,
503
(
1995
).
Google Scholar
 
22.
Y. M.
Weng,
Zh. N.
Fan
, and
X. F.
Zong,
Appl. Phys. Lett.
78
,
3520
(
1995
).
Google Scholar
 
23.
N.
Kuroda,
Y.
Matsuda,
S.
Nakajima
, and
I.
Taketsu,
J. Appl. Phys.
78
,
3520
(
1995
).
Google Scholar
 
24.
L. E.
Brus,
J. Chem. Phys.
80
,
4403
(
1984
).
Google Scholar
 
25.
T.
Komoda,
J.
Kelly,
F.
Cristiano,
A.
Nejim,
P. L. F.
Hemment,
K. P.
Homewood,
R.
Gwilliam,
J. E.
Mynard
, and
B. J.
Seally,
Nucl. Instrum. Methods B
96
,
387
(
1995
).
Google Scholar
 
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