The carrier collection losses in amorphous silicon (a‐Si) and amorphous silicon–germanium (a‐SiGe) alloy single‐junction nip cells have been experimentally investigated by measuring the biased quantum efficiency and color (blue and red) fill factor values. The study has identified losses near the p/i junction and the bulk of the i layer. The extent of the losses have been found to be dependent on the quality and thickness of the i layer and the nature of the n‐layer surface. The results suggest a broad interrelationship between the initial film properties and deposition conditions and an inhomogeneity in the direction of film growth.

Topics
Quantum efficiency, Chemical elements, Solar cells, Semiconductors
1.
J. Yang, R. Ross, T. Glatfelter, R. Mohr, G. Hammond, C. Bernotaitis, E. Chen, J. Burdick, M. Hopson, and S. Guha, Twentieth IEEE Photovoltaic Specialists Conference Proceedings, Las Vegas, NV (IEEE, New York, 1988), p. 241.
2.
S.
Guha,
J.
Yang,
A.
Banerjee,
T.
Glatfelter,
K.
Hoffman,
S. R.
Ovshinski,
M.
Izu,
H.C.
Ovshinsky
, and
X.
Deng,
Mater. Res. Soc. Symp. Proc.
336
,
645
(
1994
).
Google Scholar
 
3.
A.
Banerjee,
J.
Yang,
T.
Glatfelter,
K.
Hoffman
, and
S.
Guha,
Appl. Phys. Lett.
64
,
1517
(
1994
).
Google Scholar
 
4.
A.
Banerjee.
J.
Yang,
K.
Hoffman
, and
S.
Guha,
Appl. Phys. Lett.
65
,
472
(
1994
).
Google Scholar
 
5.
A. Banerjee, Solar Energy Mater. Solar Cells 36, 295 (1995).
6.
R. R.
Ayra,
A.
Catalano
, and
R. S.
Oswald,
Appl. Phys. Lett.
49
,
1089
(
1986
).
Google Scholar
 
7.
R. E. I.
Schropp,
J. D.
Ouwens,
M. B.
Von der Linden,
C. H. M.
Van der Werf,
W. F.
van der Weg
, and
P. F. A.
Alkemade,
Mater. Res. Soc. Symp. Proc.
297
,
797
(
1993
).
Google Scholar
 
8.
J.
Xi,
T.
Liu,
V.
Iafelice,
K.
Si
, and
F.
Kampas,
Mater. Res. Soc. Symp. Proc.
336
,
681
(
1994
).
Google Scholar
 
9.
A.
Fantoni,
M.
Vicira
, and
R.
Martins,
Mater. Res. Soc. Symp. Proc.
336
,
711
(
1994
).
Google Scholar
 
10.
A. Banerjee, X. Xu, J. Yang, and S. Guha, Mater. Res. Soc. Symp. (April 1995).
11.
J. K.
Arch,
F. A.
Rubinelli,
J. Y.
Hou
, and
S. J.
Fonash,
J. Appl. Phys.
69
,
7057
(
1991
).
Google Scholar
 
12.
See, for example, H. Curtins and M. Favre, in Amorphous Silicon and Related Materials, Vol. A, Advances in Semiconductors Vol. 1, edited by H. Fritzsche (World Scientific, Singapore, 1989), p. 329.
This content is only available via PDF.
© 1995 American Institute of Physics.
1995
American Institute of Physics
You do not currently have access to this content.