The conductance of a silicon metal‐oxide‐semiconductor field‐effect transistor, the gate of which has a neck in the middle, was measured at liquid‐helium temperatures and liquid‐nitrogen temperatures. The channel width in the neck region configured by SiO2 isolation regions is below 50 nm. The transconductance at liquid‐nitrogen temperatures shows periodic oscillations that are accentuated by negative substrate bias. We explain the results based on the one‐dimensional subbands formed in the neck region.

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