Epitaxial (111) CdTe films have been grown on (1̄ 1̄ 1̄) InP single crystals by one step electrodeposition in aqueous acidic solution, at a temperature of 85 °C, and a growth rate of about 0.7 μm h−1. Reflexion high‐energy electron diffraction and five‐circle x‐ray diffraction techniques have been used to characterize the interface structure and epitaxial quality. The epitaxy of CdTe (fcc a=6.49 Å) takes place with a direct continuation of the InP lattice (fcc a=5.87 Å), with no rotation of the respective crystallographic directions. The epitaxy is markedly improved when the InP substrate is covered with a thin film (20–30 nm) of epitaxial CdS grown by chemical bath deposition which acts as an interfacial buffer layer.

Topics
Electrodeposition, Electron diffraction, Epitaxy, Thin film deposition, Diffraction, Interfacial properties, Transition metal chalcogenides, Semiconductors
1.
R.
Sporken,
M. D.
Lange,
C.
Masset
, and
J. P.
Faurie,
Appl. Phys. Lett.
57
,
1449
(
1990
).
Google Scholar
 
2.
A. N.
Tiwari,
W.
Floeder,
S.
Blunier,
H.
Zogg
, and
H.
Weibel,
Appl. Phys. Lett.
57
,
1108
(
1990
).
Google Scholar
 
3.
J. L.
Reno,
M. J.
Carr
, and
P. L.
Gourley,
J. Appl. Phys.
67
,
4114
(
1990
).
Google Scholar
 
4.
A.
Bourret,
P.
Fuoss,
G.
Feuillet
, and
S.
Tatarenko,
Phys. Rev. Lett.
70
,
311
(
1993
).
Google Scholar
 
5.
K.
Bickmann,
J.
Hauck,
P.
Möck
, and
H.
Berger,
J. Cryst. Growth
131
,
133
(
1993
).
Google Scholar
 
6.
W. P.
Shen
and
H. S.
Kwok,
Appl. Phys. Lett.
65
,
2162
(
1994
).
Google Scholar
 
7.
G. M.
Williams,
C. R.
Whitehouse,
A. G.
Cullis,
N. G.
Chew
, and
G. W.
Blackmore,
Appl. Phys. Lett.
53
,
1847
(
1988
).
Google Scholar
 
8.
G. Hodes, in Physical Electrochemistry, edited by I. Rubinstein (Dekker, 1995), p. 515.
9.
B. W. Gregory and J. L. Stickney, J. Electroanal. Chem. 300, 543 (1991), and references therein.
10.
Y. Golan, L. Margulis, I. Rubinstein, and G. Hodes, Langmuir 8, 749 (1992).
11.
O. Staffsud, private communication cited in Ref. 10.
12.
M. P. R.
Panicker,
M.
Knaster
, and
F. A.
Kroger,
J. Electrochem. Soc.
125
,
566
(
1978
).
Google Scholar
 
13.
A. Kampmann, P. Cowache, B. Mokili, D. Lincot, and J. Vedel, J. Cryst. Growth 146, 256 (1995); J. Electroanal. Chem. 387, 53 (1995).
14.
A. K. Turner, J. M. Woodcock, M. E. Özsan, and J. G. Summers, in Proceedings of the 10th European Photovoltaic Solar Energy Conference, edited by Harwood 791 (1991), p. 791.
15.
D.
Lincot,
R.
Ortega-Borges
, and
M.
Froment,
Appl. Phys. Lett.
64
,
569
(
1994
).
Google Scholar
 
16.
M. Y.
Simons,
P. D.
Brown
, and
K.
Durose
J. Cryst. Growth
107
,
664
(
1991
).
Google Scholar
 
17.
J. E.
Angelo,
W. W.
Gerberich,
W. M.
Stobbs,
G.
Bratina,
L.
Sorba
, and
A.
Franciosi,
Philos. Mag. Lett.
67
,
279
(
1993
).
Google Scholar
 
18.
M.
Froment,
R.
Cortes,
M. C.
Bernard,
B.
Mokili
, and
D.
Lincot,
J. Electrochem. Soc.
142
,
2642
(
1995
).
Google Scholar
 
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