We report the observation of simultaneous lattice expansion and contraction in InP implanted with low‐energy protons, using the high‐resolution x‐ray rocking‐curve technique. For implantation with 260 keV, 1×1016 protons/cm2, the volume of the crystal extending from the surface to approximately 1.6 μm deep is contracted with a mean effective strain of −7×10−5, while the proton containing region is expanded to a maximum positive strain of about 7×10−4.
Topics
Semiconductors
REFERENCES
1.
C. R.
Wie
, T.
Jones
, T. A.
Tombrello
, T.
Vreeland
, Jr., F.
Xiong
, Z.
Zhu
, G.
Burns
, and F. H.
Dacol,
Mater. Res. Soc. Symp. Proc.
74
, 517
(1987
).2.
3.
C.
Bocchi
, P.
Franzosi
, L.
Lozzarini
, G.
Salvini
, L.
Gastaldi
, and R.
Palumbo,
J. Electrochem. Soc.
140
, 2034
(1993
).4.
5.
This content is only available via PDF.
© 1995 American Institute of Physics.
1995
American Institute of Physics
You do not currently have access to this content.