Growth of In0.15Ga0.85As/GaAs multilayers are reported on lattice matched In0.04Ga0.96As buffer layers using two different starting substrates: (1) a bulk, lattice‐matched, Czochralski‐grown In0.04Ga0.96As wafer, and (2) a bulk (unmatched) GaAs wafer. The structures, grown by molecular‐beam epitaxy, consist of a 200‐nm‐thick undoped buffer plus a 28‐1/2 period modulation‐doped multilayer having 10‐nm‐thick In0.15Ga0.85As quantum wells and 25‐nm‐thick GaAs barriers doped over their 10‐nm central region. The 4 K Hall mobility of the multilayer grown on the InGaAs substrate is 57% larger than the structure grown on GaAs, despite a low dislocation density observed in transmission electron micrographs of the latter. These results suggest that bulk ternary substrates can provide enhanced performance for future electronic and optoelectronic devices.

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