The transconductance of a silicon metal–oxide semiconductor field effect transistor with a neck in the middle was measured at liquid‐nitrogen temperatures. The narrowest part of the gate with p+ isolations is 0.24 μm wide and about 0.2 μm long. The transconductance shows a peaked structure near the threshold voltage. The calculated transconductance based on the ballistic transport model of two‐dimensional electron gas explains well the peaked structure.

1.
T.
Ando,
A. B.
Fowler
, and
F.
Stern,
Rev. Mod. Phys.
54
,
437
(
1982
).
2.
A. C.
Warren,
D. A.
Antoniadis
, and
H. I.
Smith,
Phys. Rev. Lett.
56
,
1858
(
1986
).
3.
J. R.
Gao,
C.
de Graaf,
J.
Caro,
S.
Radelaar,
M.
Offenberg,
V.
Lauer,
J.
Singleton,
T. J. B. M.
Janssen
, and
J. A. A. J.
Perenboom,
Phys. Rev. B
41
,
12315
(
1990
).
4.
W. J.
Skocpol,
L. D.
Jackel,
R. E.
Howard,
H. G.
Craighead,
L. A.
Fetter,
P. M.
Mankiewich,
P.
Grabbe
, and
D. M.
Tennant,
Surf. Sci.
142
,
14
(
1984
).
5.
Y. S.
Tang,
G.
Jin,
J. H.
Davies,
J. G.
Williamson
, and
C. D. W.
Wilkinson,
Phys. Rev. B
45
,
13
799
(
1992
).
6.
A. B.
Fowler,
A.
Hartstein
, and
R. A.
Webb,
Phys. Rev. Lett.
48
,
196
(
1982
).
7.
M. V. Fishetti and S. E. Laux, IEEE Trasn. Electron Devices ED-38, 650 (1991) and references therein.
8.
K. Takeuchi, D. Hisamoto, H. Yamashita, and M. Aoki (unpublished).
9.
R. J.
Tidey
and
R. A.
Stradling,
J. Phys. C
7
,
L356
(
1974
).
10.
B. J.
van Wees,
H.
van Houten,
C. W. J.
Beenakker,
J. G.
Williamson,
L. P.
Kouwenhoven,
D.
van der Marel
, and
C. T.
Foxon,
Phys. Rev. Lett.
60
,
848
(
1988
).
11.
D. A.
Wharam,
T. J.
Thornton,
R.
Newbury,
M.
Pepper,
H.
Ahmed,
J. E. F.
Frost,
D. G.
Hasko,
D. C.
Peacock,
D. A.
Ritchie
, and
G. A. C.
Jones,
J. Phys. C
21
,
L209
(
1988
).
12.
H. Jacobs, A. v. Schwerin, D. Scharfetter, and F. Lau, Technical Digest of International Electron Devices Meeting (IEEE, Washington, DC, 1993), p. 307.
This content is only available via PDF.
You do not currently have access to this content.